| PART |
Description |
Maker |
| SXL-316-TR2 SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 100/TRAY.
|
Stanford Microdevices
|
| HPQ-10 |
900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS ROHS COMPLIANT,CASE AT577, 6 PIN
|
Mini-Circuits
|
| IRFF220 FN1889 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
3.5A 200V 0.800 Ohm N-Channel Power MOSFET
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| SFF11N80B |
11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET 11 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| IRFF320 FN1890 |
From old datasheet system
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
2.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
Intersil Corporation
|
| PA1220 |
800-1000 MHz. Low Noise High Dynamic Range Linear Amplifier
800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Tyco Electronics
|
| IXTM13N80NBSP IXTH13N80NBSP IXTH11N80 IXTM13N80 IX |
MegaMOSFET
From old datasheet system
MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
IXYS, Corp.
|
| APT22F80B APT22F80S |
N-Channel FREDFET
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.43; BVDSS (V): 800; 23 A, 800 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| PD60-AMPS/GSMSERIES PD60-0015-06S |
High Power Transmit Combiners For AMPS/GSM 800960 MHz
高功率发射合路的AMPS /兆赫的GSM八十万?九百六十零
800 MHz - 960 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
|
TOKO, Inc.
|
| STU7NA80 |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
| SSP2N80A |
2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
